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NXP Demonstrates Novel 3-way Doherty Reference Design, Setting Path for More Energy Efficient RF Base Stations


Launches industry’s most power efficient discrete Doherty amplifier based on the Gen 7 LDMOS BLF7G22L-130 transistor

Expanding its portfolio of industry-leading RF power solutions, NXP, the independent semiconductor company founded by Philips, today unveiled the world’s most efficient 3-way Doherty amplifier, enabling a new standard of energy efficient RF base stations.

Based on a novel concept, the Doherty circuit performs at efficiency levels in excess of 47%, at an average power output of 48dBm, a gain of 15dB and peak to average ratio of 8dB for a multicarrier W-CDMA signal. The current design covers the W-CDMA standard for band I operation. The design is tailored towards high yield, minimum tuning, volume manufacturing.

“With the innovative 3-way Doherty concept, we uniquely combined the advantages of the Doherty amplifier with our Doherty-optimized seventh generation LDMOS technology to deliver the highest efficiency levels and good pre-distort ability, while providing significant cost savings,” says Mark Murphy, Director of marketing for RF power products, NXP Semiconductors. “We developed the Doherty technology in direct response to customer demand for high efficiency amplifiers in emerging cellular standards, such as LTE. This way, we significantly lower the total system power consumption by achieving record power efficiency and performance,” concludes Murphy.

NXP will be showcasing its first 3-way LDMOS-based Doherty amplifiers as well as other high performance products for microwave and broadcast/ISM applications at IMS 2009 exhibition in Boston, MA between 9-11th June on stand number 2403. A technical presentation on the Doherty concept will be provided during the IMS 2009 conference, held between 7-12th June.

Availability and Pricing

NXP’s 3-way LDMOS Doherty amplifier is now available for samples. For more information about NXP’s RF power solutions please visit


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