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Complete Full-Bridge System-in-Package from STMicroelectronics Includes MOSFETs, Gate Drivers, and Protection to Save Space, Simplify Design, and Streamline Assembly

Geneva, Switzerland – WEBWIRE

Geneva, December 4, 2017 -- STMicroelectronics’ PWD13F60 System-in-Package (SiP) contains a complete 600V/8A single-phase MOSFET full bridge in a 13mm x 11mm outline, saving bill-of-materials costs and board space in industrial motor drives, lamp ballasts, power supplies, converters, and inverters.
With a footprint 60% smaller than a comparable circuit built from discrete components, the PWD13F60 can also boost end-application power density. By integrating four power MOSFETs, it presents a uniquely efficient alternative to other modules on the market that are typically dual-FET half-bridge or six-FET three-phase devices. Unlike either of these choices, only one PWD13F60 is needed to implement a single-phase full bridge, leaving no internal MOSFETs unused. There is also flexibility to configure the module as one full bridge or two half bridges.
Leveraging ST’s high-voltage BCD6s-Offline fabrication process, the PWD13F60 integrates gate drivers for the power MOSFETs and the bootstrap diodes needed for high-side driving, which simplifies board design and streamlines assembly by eliminating external components. The gate drivers are optimized for reliable switching and low EMI (electromagnetic interference). The SiP also features cross-conduction protection and under-voltage lockout, which helps further minimize footprint while ensuring system safety.
Further attributes of the PWD13F60 include a wide supply-voltage range, extending down to 6.5V for maximum flexibility and simplified design. In addition, the SiP inputs can accept logic signals from 3.3V to 15V to ensure easy interfacing with microcontrollers (MCUs), digital signal processors (DSPs), or Hall sensors.
The PWD13F60 is available now, in a thermally efficient multi-island VFQFPN package, priced from $2.65 for orders of 1000 pieces.
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Note to Editors:
Within the overall vision of More than Moore (MtM) diversification, ST is driving its BCD (integrated bipolar-CMOS-DMOS) processes along three roadmaps, pursuing high-voltage, high-power, and high-density advancements. BCD6s-Offline is a 0.32µm high-voltage process as are BCD6s-SOI and 0.16µm BCD8s-SOI, while BCD8sP and 0.11µm BCD9s are high-density processes. With its portfolio of BCD processes and expertise in System-in-Package (SiP) -- another MtM technology, which combines multiple stacked or tiled dice in a single package -- ST is able to enhance performance, reduce new-product cycle times, and deliver tailored functionalities for smart-power applications. The highly optimized and compact PWD13F60 is the latest new device resulting from ST’s leadership in these MtM technologies.

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