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New and Improved Tandem Diodes from STMicroelectronics Deliver Economical Alternative to Silicon Carbide


Geneva, September 3, 2013 STMicroelectronics has unveiled its second generation of tandem diodes, which enable designers to cost-effectively enhance the energy efficiency of equipment such as power supplies, solar inverters, and e-transportation charging points.

Compared to first-generation devices, the new diodes have even lower reverse-recovery charge (QRR) to minimize switching losses, further extending their efficiency advantage over standard ultrafast diodes. The lower QRR also speeds up the fine-tuning of circuit designs, enabling faster time to market. Performance approaches that of silicon-carbide diodes, which are typically at least 30% more expensive.

The second-generation devices joining STs 600V tandem diode range are the STTH8T06DI and STTH8ST06DI rated for 8A average forward current, and the STTH12T06DI is for applications up to 12A. The devices have peak forward surge-current ratings equivalent to those of ultrafast diodes, ensuring robustness and reliability, and a wide operating junction-temperature range of -40C to 175C.

All devices are in mass production now in the TO-220AC isolated-tab package, priced from $1.57 for the STTH8T06DI in quantities of over 1,000 pieces.

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