STMicroelectronics Extends Silicon-Carbide MOSFET Family, Bringing Wide-Bandgap Advantages to Even More Applications

Geneva, February 3, 2015 – The new SCT20N120 silicon-carbide power MOSFET from STMicroelectronics brings advanced efficiency and reliability to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment.
 
ST is among the few vendors leading the development of the robust and efficient silicon-carbide power semiconductors. The 1200V SCT20N120 extends the family, with on-resistance (RDS(ON)) better than 290mΩ all the way to the 200°C maximum operating junction temperature. Switching performance is also consistent over temperature thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability.
 
In addition to their lower energy losses, ST’s silicon-carbide MOSFETs permit switching frequencies up to three times higher than similar-rated silicon IGBTs allow. This enables designers to specify smaller external components and save size, weight, and bill-of-materials costs. The SCT20N120’s high-temperature capability helps to simplify cooling-system design in applications such as power modules for electric vehicles.
 
The SCT20N120 comes with the added advantage of ST’s proprietary HiP247™ package with enhanced thermal efficiency, which allows reliable operation up to 200°C while maintaining compatibility with the industry-standard TO-247 power-package outline.
 
The SCT20N120 is in full production, priced from $8.50 for orders of 1000 pieces.
 
For further information please visit: http://www.st.com/sicmos

Contact Information

Michael Markowitz

Director WW Technical Media Relations

STMicroelectronics

(1) 781 591-0354

Michael.Markowitz@st.com