New Infineon MOSFET Families Reduce Power Losses by up to 30 Percent in Industrial, Consumer, Telecommunications Applications
Neubiberg, Germany and Austin, Texas – February 2008 – At the Applied Power Electronics Conference (APEC) today, Infineon Technologies AG (FSE/NYSE: IFX) announced that it has added three new families of power semiconductors to its extensive OptiMOS™ 3 N-channel MOSFET portfolio. The OptiMOS 3 40V, 60V and 80V families offer industry-leading performance in such key power conversion metrics as on-state resistance, which allows them to reduce power losses by as much as 30 percent in a given standard TO (Transistor Outline) package. The low switching losses and on-state resistance of the OptiMOS 3 40V, 60V and 80V families enable an increase in power densities by up to 30 percent, and a reduction in part count for a given application of more than 25 percent, compared to competitive solutions.
The new MOSFETs are intended for a variety of power conversion and management applications, including SMPSs (switched-mode power supplies), DC/DC converters and DC motor drives in computers, home appliances, small electric vehicles, industrial automation systems, telecommunications equipment and such consumer devices as power tools, electric lawnmowers and fans.
The new OptiMOS 3 families include MOSFETs that offer best-in-class R DS(on) (on-state resistance), achieving an R DS(on) as low as 1.6 mΩ for 40V products in SuperSO8™ packages, 3.5 mΩ for 60V products in D-PAK packages and 2.5 mΩ for 80V products in D˛-PAK packages. The FOM (figure of merit, calculated as on-state resistance times gate charge) of these devices is as much as 25 percent better than that of their closest competitors, and enables fast switching while minimizing conduction losses and on-state power dissipation, allowing higher power densities. It also results in less heat generation in the driver and, therefore, improved system reliability. In addition, the low R DS(on) allows the use of smaller packages, such as the 3 mm x 3 mm S3O8 (Shrink SuperSO8), so less space is required in a design thereby increasing power density.
“As a worldwide market leader in power semiconductors, Infineon designs its extensive OptiMOS MOSFET families to enable optimum performance and efficiency in low-voltage power conversion and management applications,” said Gerhard Wolf, Director at Power Management and Drives Business Unit of Infineon Technologies. “Our leadership in power semiconductor manufacturing and packaging technologies allows us to continuously improve performance while decreasing device footprints, which results in increased power densities and excellent price/performance ratios. The new OptiMOS 3 families provide best-in-class efficiency and switching characteristics that will help power supply and motor designers meet increasingly stringent energy-saving requirements while maintaining the high performance levels that users demand”.
OptiMOS 3 40V, 60V, 80V product details
The OptiMOS 3 40V family meets the needs of fast-switching SMPSs and DC/DC converters in a variety of applications, such as printers, non-isolated industrial converters and isolated DC/DC converters, in which 30V MOSFETs do not offer sufficient breakdown voltage. It has R DS(on) as low as 1.6 mΩ in a SuperSO8 package, which is more than 50 percent below that of its closest competitor. This is combined with a thermal resistance of 1° K/W and a continuous current rating of 100 A to set a new standard for low-ohmic MOSFETs in the 40 V class. The family also includes the industry’s first 40 V breakdown voltage MOSFET to be available in an S3O8 package, which represents a 60 percent footprint reduction over standard SO8 or SuperSO8 devices.
The OptiMOS 3 60V and 80V families are primarily intended for secondary side rectification in SMPSs and in motor controls and drives for DC/DC brushless and brushed motors. The 80V devices are also ideally suited to telecommunications applications. The new MOSFETs offer best-in-class R DS(on); e.g., the OptiMOS 3 80V achieves 2.8 mΩ in a TO-220 package, while the closest competitor gets no lower than 3.3 mΩ. This low R DS(on) is linked with a thermal resistance of 0.5° K/W and an unrestricted continuous current rating of 100 A to establish the new Infineon MOSFETs as the leaders in the 60 V and 80 V classes. They are also available in D-PAK packages that reduce the required board space by more than 50 percent compared to conventional D2-PAK packages, and provide a package-height reduction of 40 percent in SMPS designs.
Availability and Pricing
The new OptiMOS 3 40V, 60V and 80V power MOSFET families are available in all of the standard TO-type package types, as well as in SuperSO8 and S3O8 packages, with a range of R DS(on) figures. Members of the OptiMOS 3 60V family are now available in production quantities, and 40V and 80V devices are currently being sampled. In 10,000-piece quantities, the best-in-class OptiMOS 3 40V, with R DS(on) of 1.6 mΩ in an SSO8 package, is priced at less than $0.99 (Euro 0.68). In the same quantities, a 3.5 mΩ OptiMOS 3 60V in a D-PAK package is $0.99 (Euro 0.68), and a 2.8 mΩ OptiMOS 3 80V in a TO-220 package is $1.99 (Euro 1.37).
Infineon is showing its new families of OptiMOS 3 power semiconductors and other innovations in Booth #611 at the Applied Power Electronics Conference, February 24 - 28, 2008, in Austin, Texas.
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