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DuPont Air Products NanoMaterials L.L.C. Launches New Tunable Barrier Slurry for Advanced Technology Nodes


DuPont Air Products NanoMaterials L.L.C. (DA NanoMaterials), a 50/50 joint venture of DuPont and Air Products, today launched a non selective chemical mechanical planarization (CMP) barrier slurry with tunable copper, barrier and dielectric polishing rates for use with advanced technology nodes. CMP utilizes mechanical and chemical means in the removal of various dielectric and metal layers used in the integrated circuit (IC) manufacturing process.

CMP Slurries are comprised of very fine abrasive particles dispersed in water along with chemical additives. They are used to polish surfaces of electronic substrates and devices to smooth finishes. DA NanoMaterials’ newest slurry offering will be marketed under the CoppeReady® Cu6545 trademark*, joining other slurries the joint venture markets under its MicroPlanar®, Syton® and Mazin® trademarks.

DA NanoMaterials’ CoppeReady® Cu6545 barrier series slurry has the capability to be customized for desired performance by modulating selectivities, Cu:Black Diamond** (BD) dielectric selectivities can be tuned from 0-1. Extensive testing performed on 200 mm and 300 mm wafers shows the slurry has the capability to control copper polishing rates from less than 100 Å/min to 600 Å/min, TaN polishing rates greater than 600 Å/min and independently control BD I and BD II dielectric polishing rates from less than 100 Å/min to greater than 800 Å/min. The CoppeReady® CU6545 series is currently being qualified at 45 nm.

“The CoppeReady® Cu6545 barrier slurry is a family of products designed to provide tailored solutions to our customers for advanced technologies, both for logic and memory applications,” said Edward Shober, Chief Executive Officer for DA NanoMaterials. “The slurry utilizes highly engineered abrasives and unique chemistries that offer enhanced capabilities to optimize selectivities and provide superior defect performance, while delivering a cost effective solution.”


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