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TI unveils next-generation 3-A DDR termination regulator


Linear regulator supports DDR3 power requirements for low-power-mode memory termination

Texas Instruments Incorporated (TI) (NYSE:TXN) introduced today a sink/source double data rate (DDR) termination regulator that supports all power management requirements for DDR, DDR2, DDR3 and DDR4 low-power memory termination. The new easy-to-use regulator requires only 20 uF of ceramic output capacitance, nearly 80 percent less capacitance than competitive solutions. Designers can therefore use the device to achieve smaller and lower-cost DDR memory termination in modern, high-memory content electronics, including digital TVs, Set-Top boxes, VGA cards, telecom, datacom, notebook and desktop computers, and an increasingly wide range of consumer electronics. See:

The wide-bandwidth internal transconductance, Gm amplifier and integral dynamic voltage positioning enables ultra-fast transient response with minimal external output capacitance. In a typical application with a -1.5-A to +1.5-A load step, the output voltage variation is less than 25 mV. TPS51200 is designed to work with bias voltage between 2.375 and 3.5V, which makes it very attractive in the systems where only 2.5 or 3.3V rail is available. Additionally, the device includes the S3 sleep-state control during suspend to RAM.

The TPS51200 can also be used as a general-purpose, high-performance low dropout (LDO) regulator with an input range of 1.1 to 3.5V. The device supports tracking start-up and shutdown features when the enable pin is connected to the system bus voltage, which simplifies the design process by allowing the designer to easily implement sequencing in multi-rail systems.

The TPS51200 enhances TIís broad portfolio of DDR memory power solutions, including the TPS51100 DDR termination regulator, TPS51116 DDR Power Switcher with integrated sink/source LDO and TPS40042 low-voltage tracking switching regulator for DDR termination. The TPS51200 also complements TIís broad portfolio of DDR, DDR2 and DDR3 phase-locked loops (PLLs) and LDOs for memory technologies, including the SN74SSQE32882, PLL integrated DDR3 register for registered dual in-line memory modules, which is available in full production.


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