Cypress Adds 2-Mbit And 8-Mbit nvSRAMs To Industry-Leading Portfolio Of High-Speed, Non-Volatile Memories

0.13-Micron nvSRAMs Offer Best Solution For Computing, Automotive, Industrial and Office Applications


SAN JOSE, Calif., July 2008 - Cypress Semiconductor Corp. (NYSE: CY) today introduced 2-Mbit and 8-Mbit non-volatile static random access memories (nvSRAMs), extending Cypress’s nvSRAM portfolio from 16-Kbit to 8-Mbit. The new devices feature access times as low as 20 ns, infinite read, write and recall cycles, and 20-year data retention. They offer the best solution for applications requiring continuous high-speed writing of data and absolute non-volatile data security. Systems requiring nvSRAM functionality include servers, RAID applications, harsh-environment industrial controls, automotive, medical and data communications.

The CY14B102 2-Mbit nvSRAM and CY14B108 8-Mbit nvSRAM are ROHS-compliant and directly replace SRAM, battery-backed SRAM, EPROM and EEPROM devices, offering reliable non-volatile data storage without batteries. Data transfers from the SRAM to the device’s nonvolatile elements take place automatically at power down. On power up, data is restored to the SRAM from the nonvolatile memory. Both operations are also available under software control. The new nvSRAMs are manufactured on Cypress’s S8™ 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded nonvolatile memory technology, enabling greater densities and improved access times and performance. For more information about the Cypress family of nvSRAM products, visit www.cypress.com/NVM.

“With the addition of the 2- and 8-Mbit nvSRAMs, Cypress offers the market’s most complete portfolio with the broadest distribution and best support,” said Robert Dunnigan, vice president of Non-Volatile Products business unit at Cypress.“ ”nvSRAMs offer customers the best solution for high-speed, non-volatile memory, and these higher density devices enable new applications to take advantage of them"

The 2- and 8-Mbit nvSRAMs have an available Real-Time-Clock feature that combines the industry’s lowest standby oscillator current with the highest performance integrated memory, enabling event time-stamping supported by non-volatile memory.

nvSRAMs offer the best alternative for fast, non-volatile memory. They reduce board space and design complexity compared to battery-backed SRAMs, and are more economical and reliable than magnetic (MRAM) or ferroelectric (FRAM) memories. The new products are the latest in a series of nvSRAMs from Cypress, which also includes 16-Kbit, 64-Kbit, 256-Kbit, 1-Mbit and 4-Mbit devices currently shipping in production volumes.

A leader in SONOS process technology, Cypress will use the S8 technology in next generation PSoC® mixed-signal arrays, OvationONS™ laser navigation sensors, programmable clocks and other products. SONOS is highly compatible with standard CMOS technologies and offers numerous advantages including high endurance, low power, and radiation hardness. In addition, SONOS provides a more robust, manufacturable and cost-effective solution compared to other embedded non-volatile memory technologies.

Availability and Photo
Cypress’s 2-Mbit and 8-Mbit nvSRAMs are currently sampling, with production starting in the third quarter of 2008. The devices are available in 48-pin FBGA and 44- and 54-pin TSOPII packages. The extended line of Cypress’s nvSRAMs is second-sourced by Simtek Corporation as part of the two company’s collaborative product development efforts. For a high-resolution photo of the 2- and 8-Mbit nvSRAMs visit www.cypress.com/go/pr/photos/2M8MnvSRAMs."
Cypress, the Cypress logo and PSoC are registered trademarks of Cypress Semiconductor Corp. All other trademarks are property of their owners.