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AMD Chooses TSMC 65nm Process for GPU Product Line


AMD (NYSE:AMD) and Taiwan Semiconductor Manufacturing Company, Ltd. (TSE: 2330, NYSE: TSM) announced today that AMD has selected TSMC’s 65nm process for a broad segment of its graphics processing unit (GPU) product lineup. The announcement coincides with an important milestone in the TSMC/AMD relationship — TSMC’s shipment of two million wafers (200mm equivalent) to AMD’s Visual and Media Businesses (formerly ATI) in less than a decade.

“TSMC’s 65nm process is a proven technology that delivers exceptional performance for our high-end GPUs, while providing low power and high density for our notebook, multimedia and handheld graphics solutions,” said Dirk Meyer, AMD president and COO. “TSMC’s customer partnership, technology leadership, and world-class manufacturing have sustained our long relationship and enabled us to reach this impressive two million wafers milestone.”

TSMC’s 65nm process technologies provide essential capabilities for graphics processors, including high speed, outstanding thermal characteristics and ample bandwidth for overclocking. In addition to these technical advantages, TSMC’s 65nm design ecosystem provides companies with a rapid, reliable path to market launch.

“AMD has experienced much success over the past decade, and this milestone of two million wafers is a testament to the quality and strength of our collaborative relationship,” said Dr. Rick Tsai, president and CEO of TSMC. “Our long experience working with the graphics technology of AMD, obtained as a result of its recent acquisition of ATI, will help us take full advantage of the proven capabilities of our 65nm process in supporting AMD’s broad lineup of GPU solutions.”

About TSMC 65nm Process

TSMC’s 65nm technology is the company’s third-generation semiconductor process employing both copper interconnects and low-k dielectrics. It is a 9-layer metal process with core voltages of 1.0 or 1.2 volts, and I/O voltages of 1.8, 2.5 or 3.3 volts. The technology supports a standard cell gate density twice that of TSMC’s 90nm process. It also features very competitive 6T SRAM and 1T embedded DRAM memory cell sizes. In addition, this technology offering includes mixed signal and radio frequency functionality to support analog and wireless design, embedded high density memory to support integration of logic and memory and electrical fuse to support customer encryption needs.


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