Texas Instruments Dmos6 Receives "Top Fab Of The Year" Honor From Semiconductor International
State-of-the-art 300mm Fab Recognized for Advanced Process Technology Development and Manufacturing
DALLAS (December 1, 2006) -- Texas Instruments (NYSE: TXN) today announced that its DMOS6 manufacturing facility has been named “Top Fab of the Year” by Semiconductor International magazine. The prestigious award from the magazine’s editors recognizes top-of-the-line semiconductor fabrication facilities on criteria including sophistication of manufacturing capabilities; ability to implement new manufacturing technologies; high environmental, health and safety standards; ability to handle a wide variety of products; and ability to address demanding customer schedules and needs.
“TI’s DMOS6 is the company’s flagship facility, and exemplifies the state-of-the-art in global semiconductor manufacturing,” noted Pete Singer, editor-in-chief of Semiconductor International. “We were particularly impressed with how the fab has enabled the development of 45-nm immersion technology while still running production volumes on 130, 90 and 65-nm products.”
Located in Dallas, Texas, TI’s DMOS6 facility is the company’s most advanced production facility with over 190,000 square feet of clean room space. In 2002, DMOS6 became one of the first 300mm facilities in the world to enter customer-qualified production on 130-nm copper wafers. Today, the company produces 16,000 wafers per month across multiple process generations, including its advanced 130, 90 and 65-nm CMOS technologies, and 45-nm development wafers. As demand for advanced products continues, DMOS6 is capable of producing up to 22,000 wafers per month.
“Semiconductor International’s editors evaluate against a very strong set of criteria to determine the top fab, and TI is extremely honored that DMOS6 was selected as this year’s winner,” said Sima Salamati-Saradh, DMOS6 fab manager, Texas Instruments. “Being recognized as ’Top Fab of the Year’ demonstrates TI’s commitment to remaining at the forefront of bringing the most advanced semiconductor manufacturing to volume production and delivering products to our customers that have market-leading performance, power consumption, integration and cost.”
As part of being named as top fab, TI’s DMOS6 is featured in Semiconductor International’s December issue. For more information about the award, please visit www.semiconductor.net/awards.
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