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STMicroelectronics Extends Silicon-Carbide MOSFET Family, Bringing Wide-Bandgap Advantages to Even More Applications

Geneva, Switzerland – WEBWIRE

Geneva, February 3, 2015 The new SCT20N120 silicon-carbide power MOSFET from STMicroelectronics brings advanced efficiency and reliability to a broader range of energy-conscious applications such as inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment.

ST is among the few vendors leading the development of the robust and efficient silicon-carbide power semiconductors. The 1200V SCT20N120 extends the family, with on-resistance (RDS(ON)) better than 290mΩ all the way to the 200C maximum operating junction temperature. Switching performance is also consistent over temperature thanks to highly stable turn-off energy (Eoff) and gate charge (Qg). The resulting low conduction and switching losses, combined with ultra-low leakage current, simplify thermal management and maximize reliability.

In addition to their lower energy losses, STs silicon-carbide MOSFETs permit switching frequencies up to three times higher than similar-rated silicon IGBTs allow. This enables designers to specify smaller external components and save size, weight, and bill-of-materials costs. The SCT20N120s high-temperature capability helps to simplify cooling-system design in applications such as power modules for electric vehicles.

The SCT20N120 comes with the added advantage of STs proprietary HiP247 package with enhanced thermal efficiency, which allows reliable operation up to 200C while maintaining compatibility with the industry-standard TO-247 power-package outline.

The SCT20N120 is in full production, priced from $8.50 for orders of 1000 pieces.

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